The Influence of the Buried Oxide Defects on the Gate Oxide Reliability and Drain Leakage Currents of the Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
Abstract
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- December 1997
- DOI:
- 10.1143/JJAP.36.7104
- Bibcode:
- 1997JaJAP..36.7104I