Investigation of the transition region between ? layers wet grown at ? and Si
Abstract
Silicon oxide layers wet grown at 0953-8984/9/14/009/img11 on silicon substrates of integrated circuit quality have been investigated by slow-positron-implantation spectroscopy and Auger electron spectroscopy. The total thickness of pure 0953-8984/9/14/009/img12 on top of a 0953-8984/9/14/009/img13 transition zone is determined by ellipsometric measurements; the positron/Auger results indicate that the transition zone extends over 15 - 23 nm. Its thickness decreases as the 0953-8984/9/14/009/img12 layer is thinned by a wet-chemical process at room temperature. The results are consistent with earlier secondary-neutral mass spectroscopy measurements.
- Publication:
-
Journal of Physics Condensed Matter
- Pub Date:
- April 1997
- DOI:
- 10.1088/0953-8984/9/14/009
- Bibcode:
- 1997JPCM....9.2947A