N<SUP>++</SUP>埋め込みバッファ領域を有する新型IGBT; N<SUP>++</SUP>埋め込みバッファ領域を有する新型IGBT; A High Performance IGBT with new N+buffer structure
Abstract
- Publication:
-
IEEJ Transactions on Electronics, Information and Systems
- Pub Date:
- 1997
- DOI:
- 10.1541/ieejeiss1987.117.6_732
- Bibcode:
- 1997ITEIS.117..732Y