Growth Anisotropy and Pattern Formation during Metal Epitaxy
Abstract
The homoepitaxial growth on Cu(001) has been investigated by He atom beam scattering (TEAS) and High Resolution Low Energy Electron Diffraction (SPA-LEED). In the temperature regime below 300 K the growth initially starts `layer-by-layer', but turns gradually into multi-layer growth at higher coverage. Analysis of SPA-LEED peak profiles reveals that as growth proceeds checkerboard-like arrangements of mound-like structures are formed. The sides of the mounds are composed of <11n>-facets. The origin of such an arrangement has been traced back to laterally anisotropic advance rates of adatomisland edges in combination with a finite energy barrier for descending from a step edge.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 1997
- Bibcode:
- 1997APS..MAR.M2509P