Local Conduction Band Offset of GaSb Self Assembled Quantum Dots on GaAs
Abstract
GaSb self assembled quantum dots grown by Molecular Beam Epitaxy on GaAs exhibit a staggered (type II) band lineup with a potential barrier in the conduction band. Traditional methods cannot measure this local band offset because of the small ( 50 nm) lateral dot size. The nanometer resolution of Ballistic Electron Emission Microscopy (BEEM) is exploited to image individual dots and measure the local band offset. This work was supported by NSF National Science and Technology Center for Quantized Electronic Structures grant #DMR91-20007 and AFOSR grant #442530-22502.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 1997
- Bibcode:
- 1997APS..MAR.B1310R