Planar Josepson Weak Link Devices in YBa_2Cu_3O_7-x using Ion Irradiation
Abstract
We have fabricated planar Josephson weak links in thin films of YBCO using a conventional 200 keV ion implanter. Employing a combination of photolithography and electron beam lithography, we have opened 30-100 nm slits in a photoresist mask protecting 4 μm wide YBCO bridges. Subsequent exposure to a 200 keV Ne^+ ion beam controllably reduced Tc and Jc of this narrow region and resulted in a weak link which showed resistively shunted junction I-V characteristics. The supercurrent modulated in a small magnetic field up to 50% of the maximum value. By changing the weak link length and by adjusting the implant fluence, we could tune the operating temperature of the device. To date, we have fabricated several devices which operated at temperatures ranging from 4.2 K to 65 K and had I_cR products ranging from 50-200 μV.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 1997
- Bibcode:
- 1997APS..MAR.A1001K