Electronic Structure of Heavy Fermions: Narrow, Temperature Independent f-Bands
Abstract
ARPES measurements at T=20K and photon energy 45 eV on several Ce- and U-based single crystal heavy fermions and magnetic compounds reveal that in all cases one obtains dispersive 4f or 5f features at the Fermi energy irrespective of the Kondo temperature, T_K.The materials are: CeSb2 (T_K=1K,T_C=10K), CeBe_13 (T_K=400K), UPt3 (T_K=10K), and USb2 (T_N=200K). Any intensity loss with temperature of the near-EF feature is readily explained by conventional phonon and Fermi function contributions. For ferromagnetic CeSb2 with T=20 K, T =2T_C, while for USb2 T= 0.1T_N. In all cases the near-EF f-band disperses 10 to 30 meV, while deeper f-bands show greater dispersion. Thus both 4f and 5f electronic structures are consistent with temperature independent narrow bands.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 1997
- Bibcode:
- 1997APS..MAR..F907S