Implantation of Ions from Solid Materials using a Compact Plasma Source. Implantation of Ions from Solid Materials using a Compact Plasma Source
Abstract
Plasma Source Ion Implantation has proved to be a promising technique for the implantation of ions into planar as well as non-planar surfaces. In this paper we will discuss a variant of PSII which we call Isotropic Ion Implantation or 4πII, and which has been found promising for implanting non-gaseous ions into the substrate. The technique uses a biased target inside of a concentric grid, with a surface ECR plasma source localized outside of the grid. The ions are accelerated through the grid toward the target, so that the system resembles an ion source surrounding the target. The ion trajectories are thus determined by the electric potential in the target-grid region. Metallic ions have been produced from a sputtering source located outside the grid, while phosphorus ions have been produced from thermal evaporation. Depth profiles of implanted phosphorus will be shown, along with simulated profiles, which indicate that the main ionic species produced in the source is P_2^+.
- Publication:
-
APS Annual Gaseous Electronics Meeting Abstracts
- Pub Date:
- October 1997
- Bibcode:
- 1997APS..GECDMP307S