Surface morphology induced by homoepitaxial growth on a vicinal Si(111) surface
Abstract
We have studied homoepitaxial growth on a vicinal Si(111) surface consisting of (111) terraces and (331) facets by scanning tunneling microscopy. After the growth around 500°C, there remained (111) terraces and (331) facets. However, above 500°C, the (331) facets changed into individual steps of bilayer height at the upper part; these facets disappear at 600°C. The change of the surface morphology was deduced to be the result of the growth kinetics difference between these two surfaces.
- Publication:
-
Surface Science
- Pub Date:
- June 1996
- DOI:
- 10.1016/0039-6028(96)00277-4
- Bibcode:
- 1996SurSc.357..855Y