Gain of optically excited ZnCdSeZnSe quantum wells
Abstract
We have studied the stimulated emission of MOVPE-grown quantum wells of Zn 0.78Cd 0.22Se, sandwiched between two thicker, zinc-richer layers. The gain of these samples has been measured, as a function of temperature, using the variable strip-length method. Its mechanism has been shown to be the radiative recombination of an inhomogeneously broadened exciton system.
- Publication:
-
Solid State Communications
- Pub Date:
- January 1996
- DOI:
- 10.1016/0038-1098(95)00631-1
- Bibcode:
- 1996SSCom..97..187T