Fractal growth of silicon-rich domains during annealing of aluminum thin films deposited on silica
Abstract
We have investigated the reaction of aluminum on silica during annealing of aluminum thin films. We show that the oxidation of the aluminum is uniform, while the silicon migrates onto silicon-rich domains that have a fractal shape. We propose that the reaction is limited by diffusion of silicon in the film.
- Publication:
-
Physical Review E
- Pub Date:
- July 1996
- DOI:
- 10.1103/PhysRevE.54.599
- Bibcode:
- 1996PhRvE..54..599B
- Keywords:
-
- 68.35.Fx;
- 68.55.-a;
- 64.60.Ak;
- Diffusion;
- interface formation;
- Thin film structure and morphology;
- Renormalization-group fractal and percolation studies of phase transitions