Dielectric properties of the quasi-two-dimensional electron liquid in heterojunctions
Abstract
A quasi-two-dimensional (Q2D) electron liquid (EL) is formed at the interface of a semiconductor heterojunction. For an accurate characterization of the Q2D EL, many-body effects need to be taken into account beyond the random phase approximation. In this theoretical work, the self-consistent static local-field correction known as STLS is applied for the analysis of the Q2D EL. The penetration of the charge distribution to the barrier-acting material is taken into consideration through a variational approach. The Coulomb form factor that describes the effective 2D interaction is rigorously treated. The longitudinal dielectric function and the plasmon dispersion of the Q2D EL are presented for a wide range of electron and ionized acceptor densities choosing GaAs/AlxGa1-xAs as the physical system. Analytical expressions fitted to our results are also supplied to enable a widespread use of these results.
- Publication:
-
Physical Review B
- Pub Date:
- November 1996
- DOI:
- 10.1103/PhysRevB.54.14643
- arXiv:
- arXiv:cond-mat/9611160
- Bibcode:
- 1996PhRvB..5414643B
- Keywords:
-
- 71.45.Gm;
- 73.20.Mf;
- Exchange correlation dielectric and magnetic response functions plasmons;
- Collective excitations;
- Condensed Matter
- E-Print:
- 39 pages (in LaTeX), including 8 PostScript figures