Photoinduced electron coupling in δ-doped GaAs/In0.18Ga0.82As quantum wells
Abstract
We have measured the Shubnikov-de Haas (SdH) effect on δ-doped GaAs/In0.18Ga0.82As quantum wells for the magnetic field up to 12 T at the temperature of 1.2 K. We found two SdH oscillations due to the lowest two subbands in the In0.18Ga0.82As well with the electron densities of 14.12 and 11.02×1011 cm-2 and the parallel conduction due to the electrons of about 4.86×1011 cm-2 in the V-shaped potential well. After the illumination of the sample for different time periods, the electron densities of the two subbands oscillate, and the amplitude of SdH oscillation for E0 increases but that for E1 decreases. We believe that the reduction of SdH oscillation for E1 is due to the electron coupling with Eδ when the V-shaped potential well is lowered by the illumination. In addition, the intersubband scattering between E0 and E1 becomes less important than screening effect for E0 when Eδ coupled with E1.
- Publication:
-
Physical Review B
- Pub Date:
- August 1996
- DOI:
- 10.1103/PhysRevB.54.4774
- Bibcode:
- 1996PhRvB..54.4774L
- Keywords:
-
- 73.20.Dx;
- 73.20.Hb;
- 73.50.Jt;
- 73.61.Ey;
- Impurity and defect levels;
- energy states of adsorbed species;
- Galvanomagnetic and other magnetotransport effects;
- III-V semiconductors