Electronic structure of InAs(1¯ 1¯ 1¯)2×2 and InSb(1¯ 1¯ 1¯)2×2 studied by angle-resolved photoelectron spectroscopy
Abstract
The electronic structure of molecular-beam-epitaxy-grown InAs(1¯ 1¯ 1¯)2×2 and InSb(1¯ 1¯ 1¯)2×2 surfaces is investigated by angle-resolved photoelectron spectroscopy. Valence-band spectra, and dispersions of five surface-related structures, are presented. The qualitative similarities of data from the two surfaces indicate that they are very similar, with respect to atomic and electronic structure. Comparisons with other (111) surfaces support the identification of the surface-related structures.
- Publication:
-
Physical Review B
- Pub Date:
- July 1996
- DOI:
- 10.1103/PhysRevB.54.1833
- Bibcode:
- 1996PhRvB..54.1833A
- Keywords:
-
- 73.20.At;
- 79.60.Bm;
- Surface states band structure electron density of states;
- Clean metal semiconductor and insulator surfaces