Growth of Co on a stepped and on a flat Cu(001) surface
Abstract
The growth of Co on Cu(001) is investigated with scanning tunneling microscopy (STM), Auger electron spectroscopy, and low-energy electron diffraction. Island shape and size differs drastically for Co evaporated onto a flat or a stepped Cu(001) surface. Deviations from ideal layer-by-layer growth are small. Evaporating at 540 K results in an island free surface, annealing to 495 K induces depressions into the Co islands but does not change their shape and arrangement. A retarding field Auger system and an Auger spectrometer with cylindrical mirror analyzer are calibrated simultaneously with the help of the STM.
- Publication:
-
Physical Review B
- Pub Date:
- March 1996
- DOI:
- 10.1103/PhysRevB.53.8001
- Bibcode:
- 1996PhRvB..53.8001R
- Keywords:
-
- 61.16.Ch;
- 68.55.Jk;
- Structure and morphology;
- thickness;
- crystalline orientation and texture