Effect of transition metal implantation on the characteristics of In0.52Al0.48As/In0.53Ga0.47As metal-semiconductor-metal detectors
Abstract
This work studied the effect of transition metal implantation on the dc photoresponsivity and frequency response of both n- and p-type InAlAs/InGaAs metal- semiconductor-metal photodetectors. A thin (500 angstroms) InAlAs layer was grown 1 micrometers thick to raise the Schottky barrier height of the metal-semiconductor interface. Multiple energy Fe and Ti implantation was performed into n- and p-type layers, respectively, to obtain uniform implant concentrations over the entire depth of the InAlAs/InGaAs layers. The Fe implantation caused an increase in photoresponsivity and a decrease in bandwidth, whereas the Ti implantation resulted in a decrease in photoresponsivity and a slight increase in bandwidth compared with the no- implantation case.
- Publication:
-
Optical Engineering
- Pub Date:
- December 1996
- DOI:
- 10.1117/1.601099
- Bibcode:
- 1996OptEn..35.3400R