2 MeV Si ion implantation damage in relaxed Si 1- xGe x
Abstract
The damage produced by implanting, at room temperature, 3 μm thick relaxed Si 1- xGe x layers with 2 MeV Si + ions has been measured as a function of Ge content ( x = 0.04, 0.13, 0.24 or 0.36) and Si dose in the dose range 10 10-10 15 cm -2. The accumulation of damage with increasing dose has been studied as a function of Ge content by Rutherford Backscattering Spectrometry, Optical Reflectivity Depth Profiling and Transmission Electron Microscopy and an increased damage efficiency in Si 1- xGe x with increasing x is observed. The characteristics of implantation-induced defects have been investigated by Electron Paramagnetic Resonance. The results are discussed in the context of a model of the damage process in SiGe.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- December 1996
- DOI:
- 10.1016/S0168-583X(96)00501-0
- Bibcode:
- 1996NIMPB.120..165O