A study of the blue photoluminescence emission from thermally-grown, Si +-implanted SiO 2 films after short-time annealing
Abstract
Thermal SiO 2 films have been implanted with Si + ions using double-energy implants (200 + 100 keV) at a substrate temperature of about -20°C to total doses in the range 1.6 × 10 16-1.6 × 10 17 cm -2 followed by short-time thermal processing, in order to form a Si nanostructure capable of yielding blue photoluminescence (PL). The intensity and the peak position of the PL band have been investigated as a function of ion dose, manner of heat treatment, anneal time and anneal temperature. For the formation of blue PL emitting centres, optimum processing conditions in terms of excess Si concentration and overall thermal budget are mandatory. The nature of the observed blue emission is discussed.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- December 1996
- DOI:
- 10.1016/S0168-583X(96)00489-2
- Bibcode:
- 1996NIMPB.120..106S