Visible photoluminescence of SiO 2 implanted with carbon and silicon
Abstract
The structures formed after sequential implantation of silicon plus carbon in amorphous SiO 2 and annealing presented strong photoluminescence bands in the deep red (1.4-1.6 eV) and green (2.0-2.2 eV) regions of the visible spectrum. The energy and intensity of the bands depended strongly on the temperature and duration of annealing. Different behaviours with post-processing were encountered for the red and green bands, including deexcitation kinetics and structural origin. The FTIR, Raman and HRTEM measurements showed that silicon crystallites were reponsible for the red emitting band while carbon aggregates were probably the origin of the green one.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- December 1996
- DOI:
- 10.1016/S0168-583X(96)00488-0
- Bibcode:
- 1996NIMPB.120..101G