Etching threshold for ion tracks in polyimide
Abstract
Tracks of various heavy ions with energies up to 13 MeV/u were studied using the technique of selective chemical etching. It was found that for homogeneous track etching the energy loss of the ions has to surpass a threshold of about 450 eV/Å. In a transition regime between 180 and 450 eV/Å etching was possible but the mean diameter of the resulting pores showed a wider distribution than pores at higher energy losses. In order to describe this observation, the radial dose distribution was calculated using a Monte Carlo simulation code. Inhomogeneous etching is interpreted as due to the spatial fluctuations of the deposited energy along the ion path.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- August 1996
- DOI:
- 10.1016/0168-583X(96)00083-3
- Bibcode:
- 1996NIMPB.116..429T