Erratum: Ion-beam-induced epitaxial crystallisation of metastable Si1-x-yGexCy layers fabricated by Ge and C ion implantation (Nuclear Instruments and Methods in Physics Research B (1995) 106 (289)
Abstract
Formation of metastable Si 1- x-yGe xC y layers ( x = 0.13 and y = 0.014 at peak concentration) on Si(100) has been performed by high-dose implantation of 80 keV Ge and 17 keV C ions and subsequent ion-beam-induced epitaxial crystallisation (IBIEC) with 400 keV Ar or Ge ion bombardments at 300-400°C. Their structural properties are compared with those of Si 1- x-yGe xC y layers grown by solid phase epitaxial growth (SPEG) up to 700°C. Crystalline growth by IBIEC has shown a larger growth rate in {Si1-x-yGexCy}/{Si} than in {Si1-x}/{Si} with the same Ge concentration for all bombardments under investigation. Depth profiles of implanted atoms observed by SIMS measurements have revealed almost the same profiles for Ge and C atoms after IBIEC process. X-ray rocking curve measurements have shown a strain-compensated growth of {Si1-x-yGexCy}/{Si} by IBIEC, whereas it has been suggested that {Si1-x-yGexCy}/{Si} layers crystallised by SPEG have both compressive and tensile strains.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- July 1996
- DOI:
- 10.1016/0168-583X(96)80073-5
- Bibcode:
- 1996NIMPB.114..403K