Investigation of the damage induced by 200 keV Ge + ion implantation in 6HSiC
Abstract
Investigations of damage induced by 200 keV Ge + ion implantation into 6HSiC have been carried out to characterize 3 different levels of damage in respect of the irradiation dose. Up to now, mainly vacancy-type defects and dislocations have been identified. High diffusion of defects, and chemical disorder in amorphized layer, have been observed in this study.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- May 1996
- DOI:
- 10.1016/0168-583X(95)01006-8
- Bibcode:
- 1996NIMPB.112..321P