Quantum yield of silicon near the L II,III-shell absorption edge
Abstract
A quantum yield model developed for use in the near ultraviolet was extended to cover absorption by core-electrons. The model is based on integrating the density-of-states average number of electron-hole pairs created by a primary electron or hole over the distribution of electron-hole pairs created by absorption of photons of energy hv. For core-electron absorption and for photon energies well above the fundamental absorption edge, simple models exist for the results of the integration. These models were used to calculate the photon pair-creation energy W( hv, 300 K) in the vicinity of the silicon L II,III absorption edge. They predict some features superimposed on a small average increase in pair creation energy across the L II,III edge.
- Publication:
-
Nuclear Instruments and Methods in Physics Research A
- Pub Date:
- February 1996
- DOI:
- 10.1016/0168-9002(96)00439-1
- Bibcode:
- 1996NIMPA.378..343G