The effect of radiation induced defects on the performance of high resistivity silicon diodes
Abstract
An overview of defect kinetics in high resistivity silicon is presented. A device model which gives type inversion due to the presence of deep acceptors is described.
- Publication:
-
Nuclear Instruments and Methods in Physics Research A
- Pub Date:
- February 1996
- DOI:
- 10.1016/0168-9002(95)01413-6
- Bibcode:
- 1996NIMPA.377..224M