InP-based multiple quantum well structures grown with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP): Effects of growth interruptions on structural and optical properties
Abstract
In this paper, we investigate the effect of interfacial layers on GalnAs(P)/GalnAsP and GalnAs/InP multiple quantum well structures with x-ray diffraction and photoluminescence. We observe a decrease in the room temperature and low temperature photoluminescence intensity as the number of periods is increased which we attribute to the interfaces. Furthermore, different growth interruption schemes show that decomposed As species from TBA have an effect on the structural and optical quality of these structures at both the lower and upper interfaces due to As carry-over. The effect of this carry-over is shown in structural measurements and laser diode results.
- Publication:
-
Journal of Electronic Materials
- Pub Date:
- June 1996
- DOI:
- 10.1007/BF02666731
- Bibcode:
- 1996JEMat..25..965H
- Keywords:
-
- GalnAsP;
- metalorganic chemical vapor deposition (MOCVD);
- multiple quantum well (MQW);
- photoluminescence (PL);
- tertiarybutylarsine (TBA);
- tertiarybutylphosphine (TBP);
- x-ray diffraction (XRD)