Mesoscopic nonuniformity of wafer-annealed semi-insulating InP
Abstract
We have analyzed the mesoscopic uniformity of as-grown and annealed low Fedoped InP-wafers grown by different methods (LEC/VGF). Both by scanning photoluminescence measurements and by high resolution point contact mappings corresponding inhomogeneities on a typical scale of 50–70 μm have been observed, showing that most probably the Fe-distribution is nonuniform. By comparison with the distribution of etch-pits, a tentative model for their creation is discussed.
- Publication:
-
Journal of Electronic Materials
- Pub Date:
- March 1996
- DOI:
- 10.1007/BF02666603
- Bibcode:
- 1996JEMat..25..363H
- Keywords:
-
- Annealing;
- bulk;
- Fe-doped InP;
- mesoscopic nonuniformity;
- point contact mapping;
- scanning photoluminescence (PL)