Optical anisotropy of the {ZnSe}/{GaAs} interface
Abstract
The in-plane optical anisotropy of the {ZnSe}/{GaAs} interface is studied using reflectance difference (RD) spectroscopy in the 300-700 nm spectral range. Strong resonances near the E0 bandgap energy and the E0 + Δ gap energy of bulk ZnSe are observed in both the real and the imaginary parts of the RD spectra. The shape of these resonances changes as a function of ZnSe top layer thickness. Such change is well explained by a three-layer optic model. Possible causes of the resonances are explored, but none has been confirmed so far.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- February 1996
- DOI:
- 10.1016/0022-0248(95)00644-3
- Bibcode:
- 1996JCrGr.159..741Y