Some unsolved problems on Czochralski growth of silicon from the viewpoint of materials modeling
Abstract
In this report the oxidation-induced stacking fault ring in Czochralski-grown Si, which is not fully understood in spite of the practical importance, is discussed, as well as the necessity of materials modeling to understand it.
- Publication:
-
Journal of Computer-Aided Materials Design
- Pub Date:
- August 1996
- DOI:
- 10.1007/BF01185663
- Bibcode:
- 1996JCMD....3..267K
- Keywords:
-
- Czochralski silicon;
- Grown-in defects;
- Oxidation stacking faults;
- Gate oxide integrity;
- Anomalous oxygen precipitation;
- Intrinsic point defects