Magnetotransport effects in p-GaAs/AlGaAs quantized structures under uniaxial stress
Abstract
Quantum oscillations of magnetoresistance and quantum Hall effect have been investigated in (001) p-GaAs/Al0.5Ga0.5As single and double heterostructures under uniaxial compression up to P=3.2kBar. In asymmetric triangular quantum well (QW) at single heterointerface application of uniaxial compression in [110] direction results in redistribution of carriers between two spin splitted subbands of the heavy hole ground state. Approximately 2.5 times decrease of subband splitting in zero magnetic field is estimated at P=2.5kBar from carrier concentration and effective mass measurements. The effect of stress is different for approximatly square QW.
- Publication:
-
Czechoslovak Journal of Physics Supplement
- Pub Date:
- May 1996
- DOI:
- 10.1007/BF02570245
- Bibcode:
- 1996CzJPS..46.2517H