Electrical characteristics of the rf-excited oxygen plasma-cathodization-grown SiO2/Si interface
Abstract
The electrical properties of the SiO2/n-type Si(100) interface, where the silicon-oxide layer was grown by an electrodeless rf oxygen-plasma-cathodization technique, were investigated using C-V and DLTS methods. Interface traps with high density in the range of 1012 eV-1 cm-2 and a capture cross section as large as 10-18 cm2 were found in the upper region of the silicon forbidden gap. After a post-annealing process, typically at 400°C for 30 min in dry N2 atmosphere, their densities and capture cross sections were reduced to the range of 1 2 × 1011 eV-1 cm-2 and 10-19 cm-2, respectively. Apparant differences in DLTS curves before and after thermal annealing were also observed. Results are qualitatively explained by considering the specific oxidation and annealing mechanism of this low-temperature silicon-oxidation technique.
- Publication:
-
Applied Physics A: Materials Science & Processing
- Pub Date:
- April 1996
- DOI:
- 10.1007/BF01594239
- Bibcode:
- 1996ApPhA..62..391L
- Keywords:
-
- 73.20.;
- r;
- 81.40.Rs;
- 81.60.Cp