Gas Adsorption On Metallic Films Monitored By Resistance Measurements
Abstract
Adsorption of H2 and CO on Nb films was monitored by changes of the film resistance during the exposure to the gases. Films with thicknesses of 40, 200 and 400 nm were deposited onto saphire substrates by sputtering. The increase in resistance was measured at room temperature during exposure to 1000 Langmuir of either H2 or CO. When the gas dosing was discontinued and the chamber was evacuated, the film resistance decreased until it reached its initial value. The change in resistance of the Nb films upon exposure to either H2 or CO are comparable in magnitude and related to weakly adsorbed states of these molecules close to the Nb surface. Our results are analyzed and compared with prior experiments on the CO/Co system. Partially funded by FONDECYT 1940696 and the National Science Fundation (NSF). International travel provided by the NSF.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 1996
- Bibcode:
- 1996APS..MAR.K1613C