Magnetotransport in an AlGaAs/GaAs/AlGaAs Quantum Well
Abstract
The electronic magnetoresistance in a quantum well is investigated in the presence of both, electric and magnetic fields. A one subband variational wavefunction scheme [S. Mori and T. Ando, J. Phys. Soc. Jpn. 48, 865 (1980)] has been used to obtain the electronic interface potential and the associated energy level analytically. The resulting energy, once minimized, yields the variational parameters to be used in obtaining the overlap integrals in the scattering. The impurity, polar optical and acoustic phonon scattering mechanisms are incorporated in the transport equations. The magnetotransport is investigated within a steady state approach [Cai et al., Phys. Rev. B 31, 4070 (1985)] that takes into account up to 60 Landau levels in the calculations. The low temperature preliminary results for an electron concentration of 10^12 electrons is compared with experiment [Kim et al. J. Appl. Phys. 76, 2863 (1994)]. *Supported by grants from WGC, Res. Corp. and the NSF-PSC.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 1996
- Bibcode:
- 1996APS..MAR.J1414H