Time-Resolved Photoluminescence of (111)B InGaAs Quantum Wells
Abstract
A single InGaAs QW is grown by MBE within the intrinsic region of a (111)B GaAs p-i-n structure. The biaxial compressive strain within the QW structure leads to a substantial piezoelectric field that opposes the p-i-n field. The behavior of the time-resolved QW photoluminescence is studied as a function of the bias applied to the diode. Theoretical calculations are compared with experimental results, and the results are contrasted with the behavior seen in similar (100) structures without a strain-induced field.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 1996
- Bibcode:
- 1996APS..MAR.G1401T