Low Temperature Synthesis of Diamond Films with Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
Abstract
Polycrystalline diamond films have been synthesized in a CH_4/H_2/O2 microwave discharge at substrate temperatures down to 300 ^oC by combining three strategies: the low temperature limit for diamond growth was reduced by decreasing the total gas pressure in the deposition chamber to 1-3 Torr; low pressure diamond growth was enhanced by applying a static axial magnetic field to the plasma generation region to increase gas dissociation and ionization in the Torr pressure range; and the microwave input power was pulse modulated to control the relative fluxes of neutral atomic hydrogen and charged positive ions to the substrate. With these combined methods, high quality diamond films exhibiting a clearly defined Raman phonon peak could be grown at backside substrate temperatures from 300 ^oC to 500 ^oC.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 1996
- Bibcode:
- 1996APS..MAR.F2503M