Charge Transfer and Surface Scattering at Cu/C_60 Planar Interfaces
Abstract
Thin films of Cu and C_60 have been sequentially deposited onto insulating substrates in high vacuum and studied using in situ resistivity measurements during deposition. Different regimes of behavior, which manifest the transfer of electrons from the Cu metal across the planar interface to the C_60, are identified. For example, in the continuous film limit, in which the Cu is thick enough to have a size-effect resistivity proportional to the reciprocal of the film thickness, the presence of an adjacent C_60 monolayer gives rise to an increase in resistance. This resistance increase is quantitatively described by a scattering model in which the interfacial diffuse scattering cross section is found to be 5Åthe approximate area of a face of the molecular cage. In a second regime of behavior, in which the ultra-thin Cu films have a morphology of coalescing islands, the presence of an adjacent C_60 monolayer, doped by charge transfer from the metal, creates a shunting path with sheet resistance ~8000Ω/Box accompanied by a pronounced decrease in resistance. The inferred room-temperature resistivity is more than a factor of two less than that of the 3-dimensional alkali-metal-doped compounds, A_3C_60 (A=K,Rb).
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 1996
- Bibcode:
- 1996APS..MAR.B2301H