Ionized Magnetron Sputtering with a Coupled DC and Microwave Plasma
Abstract
A DC magnetron sputtering system is enhanced via an antenna microwave source. The ability of the microwaves to ionize the metal atoms from the aluminum target though electron impact and Penning ionization is studied as a function of microwave power, magnetron power, and pressure. A bias in the tens of volts (negative) is applied to the substrate and sample. This creates an electric field between the plasma and the substrate which is designed to draw the metal ions into the sample orthogonally for filling increased aspect ratio trenches. A quartz crystal oscillator is placed behind a gridded energy analyzer and embedded in the substrate. It determines the ion-to-neutral ratio and the deposition rate, and the gridded energy analyzer determines the energy spectrum of the ions, the ion current density, and the uniformity. These quantities are compared to the results of a computer simulation.
- Publication:
-
APS Annual Gaseous Electronics Meeting Abstracts
- Pub Date:
- October 1996
- Bibcode:
- 1996APS..GECTUPA09H