Measurement of Plasma Uniformity in an Inductively-Coupled Plasma Reactor
Abstract
A simple linear four point ion current collector probe array, and a high-accuracy 20 point probe array are described. Such probe arrays are used for measuring ion current flux at the wafer position in prototype commercial polysilicon and tungsten silicide etch chambers. These measurements allow one to measure how the plasma uniformity at the wafer changes with discharge conditions; with the geometry of the inductively-coupled plasma (ICP) source antenna; and with chamber body geometry. The uniformity of the ion current flux at the wafer is influenced by both antenna construction as well as chamber body design. A simple method is described which allows one to measure (in part) how much of the plasma non-uniformity is due to the chamber, and how much is due to the ICP antenna.
- Publication:
-
APS Annual Gaseous Electronics Meeting Abstracts
- Pub Date:
- October 1996
- Bibcode:
- 1996APS..GEC.MPA12S