Photon radiation damage in high purity silicon and lec si gallium arsenide detectors

Observations have been made of the behaviour of high resistivity silicon and semi-insulating gallium arsenide ionizing radiation detectors after exposure of up to 30 Mrad ⁶⁰Co photons. Results are presented on leakage current and deep level defects of the substrate material of photon damage devices. These findings have been related to the charge collection efficiency of the detectors.