Conversion of insulating thin films of MgIn 2O 4 into transparent conductors by ion implantation
Abstract
MgIn 2O 4 (IMO) is a crystal with spinel-type structure and has a wide band gap of ∼ 3.5 eV. Electrical conductivities in rf sputter-deposited thin films of IMO at room temperature increased from <10 -7 to ∼10 S· cm -1 (n-type conduction) in the as-implanted state, when implanted with H + or Li + to a fluence of 2 × 10 16 cm -2. The efficiency of carrier generation was ∼ 20% in the as-implanted state and ∼ 40% after annealing at 300°C for H + and Li +, respectively. No carrier generation was perceived in He +-implanted specimens. Although color centers, giving a band at ∼ 500 nm, were produced by implantation, they disappeared during annealing at ∼ 300°C. As a consequence, optically transparent conducting IMO films were obtained by implantation and subsequent annealing.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- December 1995
- DOI:
- 10.1016/0168-583X(95)00762-8
- Bibcode:
- 1995NIMPB.106..517H