Creep of a crystalline metallic layer induced by GeV heavy ion irradiation
Abstract
The atomic transport induced in amorphous systems by ion electronic energy loss is studied on metallic sandwiches irradiated with 500 MeV iodine ions. The sandwiches are composed of two amorphous Ni 3B layers of thickness 1-1.5 μm and of one crystalline Au or W layer of thickness varying from 20 to 900 nm. Rutherford backscattering experiments using a 3.6 MeV He beam were performed to determine the modifications of the geometry of the sandwiches due to irradiation. A huge creep phenomenon is evidenced in the crystalline part of the sample. The amplitude of the creep depends on the nature of the crystalline layer (Au or W) and decreases with the layer thickness. This creep phenomenon is induced by the plastic deformation process occurring in the amorphous layers surrounding the crystalline one, and is due to ion electronic energy loss.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- December 1995
- DOI:
- 10.1016/0168-583X(95)00759-8
- Bibcode:
- 1995NIMPB.106..500B