Superstoichiometric h-BN films synthesized by ion-beam assisted deposition; N-concentration and respective ion energy dissipation
Abstract
Experimental data on the nitrogen content in films grown by ion-assisted deposition are compared to the specific energy (per film atom) dissipated by the ions in displacement damage. As shown there exists a proportionality between the overstoichiometric N content and the energy dissipated in a superficial layer of the growing film.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- June 1995
- DOI:
- 10.1016/0168-583X(95)00352-5
- Bibcode:
- 1995NIMPB.100..505G