Synthesis of semi-insulating GaAs by As implantation and thermal annealing: Structural and electrical properties
Abstract
High dose As implantation in GaAs followed by annealing at 600°C results in the formation of semi-insulting GaAs layers. These layers are relaxed with a homogenous distribution of metallic As precipitates similarly to what is observed in GaAs grown by molecular beam epitaxy at about 200°C (LT-MBE-GaAs), after annealing at 600°C. By selecting the implantation parameters it is possible to adjust the thickness of the subsequent SI layer and to monitor the amount of excess As in the crystal. By selecting the annealing temperature it is possible to fabricate either a material very similar to the as-grown LT-MBE-GaAs or a material similar to annealed LT-MBE-GaAs.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- March 1995
- DOI:
- 10.1016/0168-583X(94)00511-7
- Bibcode:
- 1995NIMPB..96..327C