Photolithographic Pattern Transformation by Backside Exposure in a-Si:H Thin-Film Transistor Liquid Crystal Displays
Abstract
Resist pattern transformation by backside exposure, which is a key process for a self-alignment technique is investigated. The light intensity and a-Si:H thickness markedly affect the pattern transformation, while the effect of gate insulator thickness is small. Numerical simulations based on Fresnel diffraction showed fairly good agreement with the experimental results.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- February 1995
- DOI:
- 10.1143/JJAP.34.486
- Bibcode:
- 1995JaJAP..34..486U