Improving the quality of GaAs films by electron beam irradiation during molecular beam epitaxial growth at low temperature
Abstract
Thin GaAs films were grown on (001) GaAs substrates at temperatures ranging from 300 C to 400 C using Ga and As molecular beams under electron beam irradiation. These films were compared with GaAs films grown at the same temperatures by conventional molecular beam epitaxy (MBE). Electron beam irradiation improved the reflection high-energy electron diffraction (RHEED) patterns and increased the photoluminescence intensities of the GaAs films. These improvements were not a result of raised growth temperatures caused by electron beam irradiation.
- Publication:
-
Japanese Journal of Applied Physics Letters B
- Pub Date:
- March 1995
- Bibcode:
- 1995JJAPL..34L.339T
- Keywords:
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- Gallium Arsenides;
- Growth;
- Molecular Beam Epitaxy;
- Quality Control;
- Semiconducting Films;
- Semiconductors (Materials);
- Substrates;
- Thin Films;
- Electron Beams;
- Electron Diffraction;
- High Energy Electrons;
- Low Temperature;
- Molecular Beams;
- Photoluminescence;
- Electronics and Electrical Engineering