Preparation of (100)-oriented metallic LaNiO3 thin films on Si substrates by radio frequency magnetron sputtering for the growth of textured Pb(Zr0.53Ti0.47)O3

Highly (100)-oriented LaNiO₃(LNO) thin films were grown on Si, SiO₂/Si, Pt/SiSiO₂/Si, as well as glass substrates by rf magnetron sputtering deposition at substrate temperatures ranging from 150 to 500 °C. As-deposited LNO films are metallic; those prepared at substrate temperature ∼150-250 °C have a resistivity of 0.4-0.5 mΩ cm and can be used as the bottom electrode for the fabrication of integrated ferroelectric capacitors on Si. A subsequent deposition of sol-gel derived Pb(Zr_0.53Ti_0.47)O₃ (PZT) thin film on the LNO-coated substrate was also found to have a significant (100)- and (001)-oriented texture. The ferroelectric capacitor fabricated from these films displays a good P-E hysteresis characteristic.