Method for intrinsically doped III-A and V-A compounds and products thereof
Abstract
An amorphous compound is changed to single crystal structure by heating at an elevated temperature in an inert atmosphere or in an atmosphere of a forming gas. The amorphous compound is composed of at least one Group III-A element of the Periodic Table and at least on Group V-A element, the amorphous compound having an excess over stoichiometric amount of at least one Group V-A element. The single crystal phase compound, intrinsically doped with at least one element from Group V-A, has the properties of high conductivity for a semiconductor without using any extrinsic dopant and a non-alloyed ohmic contact with a metal.
- Publication:
-
Patent Application Department of the Navy
- Pub Date:
- April 1994
- Bibcode:
- 1994padn.reptQ....T
- Keywords:
-
- Amorphous Materials;
- Crystal Structure;
- Doped Crystals;
- Heat Treatment;
- Semiconducting Films;
- Single Crystals;
- Crystallization;
- Epitaxy;
- Patent Applications;
- Semiconductors (Materials);
- Solid-State Physics