Bounding the total-dose response of modern bipolar transistors
Abstract
The base current in modern bipolar transistors saturates at large total doses once a critical oxide charge is reached. The saturated value of base current is dose-rate independent. Testing implications are discussed.
- Publication:
-
Presented at the 31st Annual International Nuclear and Space Radiation Effects Conference
- Pub Date:
- January 1994
- Bibcode:
- 1994nsre.confR..18K
- Keywords:
-
- Bipolar Transistors;
- Dosage;
- Irradiation;
- Radiation Effects;
- Electric Current;
- Radiation Hardening;
- Silicon Oxides;
- Electronics and Electrical Engineering