Proton irradiation effects on advanced digital and microwave III-V components
Abstract
A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10(exp 10) to 2 x 10(exp 14) protons/sq cm. Large soft-error rates were measured for digital GaAs MESFET (3 x 10(exp -5) errors/bit-day) and heterojunction bipolar circuits (10(exp -5) errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage was observed for 1.0-(mu)m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10(exp 14) protons/sq cm (equivalent to total doses in excess of 10 Mrad(GaAs)).
- Publication:
-
Presented at the 31st Annual International Nuclear and Space Radiation Effects Conference
- Pub Date:
- January 1994
- Bibcode:
- 1994nsre.conf...18H
- Keywords:
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- Field Effect Transistors;
- Gallium Arsenides;
- High Electron Mobility Transistors;
- Integrated Circuits;
- Microwave Equipment;
- Proton Irradiation;
- Radiation Effects;
- Degradation;
- Displacement;
- Satellite Communication;
- Electronics and Electrical Engineering