Theoretical studies of the transport properties in compound semiconductors
Abstract
This final report is an overview of the work done on Cooperative Agreement NCC 3-55 with the Solid State Technology Branch of the NASA-Lewis Research Center (LeRC). Over the period of time that the agreement was in effect, the principal investigator and, in the last three years, the co-principal investigator worked on a significant number of projects and interacted with members of the Solid State Technology (SST) branch in a number of different ways. For the purpose of this report, these efforts will be divided into five categories: 1) work directly with experimental electrical transport studies conducted by members of the SST branch; 2) theoretical work on electrical transport in compound semiconductors; 3) electronic structure calculations which are relevant to the electrical transport in polytypes of SiC and SiC-AlN alloys; 4) the electronic structure calculations of polar interfaces; and 5) consultative and supportive activities related to experiments and other studies carried out by SST branch members. Work in these categories is briefly discussed.
- Publication:
-
Final Technical Report Case Western Reserve Univ
- Pub Date:
- June 1994
- Bibcode:
- 1994cwru.rept.....S
- Keywords:
-
- Atomic Structure;
- Heterojunctions;
- Semiconductors (Materials);
- Silicon Carbides;
- Transport Properties;
- Aluminum Nitrides;
- Boltzmann Transport Equation;
- Gallium Arsenides;
- Gallium Nitrides;
- Hall Effect;
- Electronics and Electrical Engineering