Semiconductor laser joint study program with Rome Laboratory
Abstract
A program to jointly study vertical-cavity surface emitting lasers (VCSEL) for high speed vertical optical interconnects (VOI) has been conducted under an ES&E between Rome Laboratory and Cornell University. Lasers were designed, grown, and fabricated at Cornell University. A VCSEL measurement laboratory has been designed, built, and utilized at Rome Laboratory. High quality VCSEL material was grown and characterized by fabricating conventional lateral cavity lasers that emitted at the design wavelength of 1.04 microns. The VCSEL's emit at 1.06 microns. Threshold currents of 16 mA at 4.8 volts were obtained for 30 microns diameter devices. Output powers of 5 mW were measured. This is 500 times higher power than from the light emitting diodes employed previously for vertical optical interconnects. A new form of compositional grading using a cosinusoidal function has been developed and is very successful for reducing diode series resistance for high speed interconnection applications. A flip-chip diamond package compatible with high speed operation of 16 VCSEL elements has been designed and characterized. A flip-chip device binding effort at Rome Laboratory was also designed and initiated. This report presents details of the one-year effort, including process recipes and results.
- Publication:
-
Cornell Univ. Final Report
- Pub Date:
- September 1994
- Bibcode:
- 1994cuni.reptR....S
- Keywords:
-
- Aluminum Gallium Arsenide Lasers;
- Infrared Lasers;
- Molecular Beam Epitaxy;
- Optical Coupling;
- Surface Emitting Lasers;
- Emittance;
- Laser Cavities;
- Near Infrared Radiation;
- Ohmic Dissipation;
- Threshold Currents;
- Lasers and Masers